Equation icon  Equivalent oxide thickness

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Resource type: Equation
Description: As integrated circuits are miniaturised, quantum tunnelling of electrons between adjacent interconnects and transistors becomes a problem, causing signal loss and the generation of heat. To combat this, replacement dielectrics can be used, for example HfO2, which has a k ≅ 21 F.m-1. This allows a thicker dielectric layer to be used to give the same performance as SiO2 with a reduced likelihood of quantum tunnelling.

TeX format: {EOT = t_{high-k} \left(\frac{k_{SiO_2}}{k_{high-k}}\right)}

EOT {EOT} = equivalent oxide thickness (m) {m}
thigh-k {t_{high-k}} = thickness of high-k dielectric layer (m) {m}
kSiO2 {k_{SiO_{2}}} = relative permittivity of SiO2 (3.9 F.m-1) {3.9 F.m^{-1}}
khigh-k {k_{high-k}} = relative permittivity of SiO2 replacement (F.m-1) {F.m^{-1}}

Keywords: oxide • thickness • EOT • SiO2 • HfO2 • dielectric • IC • integrated circuits • quantum • tunnelling
Categories: Science approaches
Science approaches > Modelling & simulation
Applications > Electronics
Properties > Electrical, magnetic & optical > Conductivity
Testing, analysis & experimentation
Created by: The University of Liverpool
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Date created: 18 August 2010
Date added: 14 September 2010
Resource ID: 3202