Equation icon  Critical thickness for strained oxide deposition

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Resource type: Equation
Description: One method of increasing the speed of a microprocessor is to deposit strained channel material between gates in MOSFETs. This effectively reduces the delay in and between transistors. Electrons passing from one gate to another encounter less material and as such undergo less scattering, increasing their apparent velocity. The thickness of the strained material is limited by the strain field associated with the lattice mismatch between the channel and substrate material, and at a critical thickness will introduce dislocations into the deposited material, which are detrimental to the effect sought.

TeX format: {h_c = \frac{2}{s}\cdot\frac{1-\nu}{E{\varepsilon_m}^2}\cdot P}

hc {h_c} = critical oxide thickness (m) {m}
ν {\nu} = Poisson's ratio for strained material
s {s} = mean separation of misfit dislocations (m) {m}
E {E} = Young's modulus of strained material (Pa) {Pa}
εm {\varepsilon_{m}} = misfit strain
P {P} = dislocation energy per unit length (N.m-1) {N.m^{-1}}

Keywords: oxide • dielectric • strained • silicon • SiO2 • transistors • MOSFET • IC • integrated circuits • substrate • deposition • scattering
Categories: Science approaches
Science approaches > Structure, bonding & defects > Atomic & molecular bonding
Processes > Shaping > Deposition
Applications > Electronics
Properties > Electrical, magnetic & optical > Conductivity
Testing, analysis & experimentation > Electrical testing
Created by: The University of Liverpool
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Date created: 18 August 2010
Date added: 14 September 2010
Resource ID: 3203