Image icon  ZrNiSn Single Crystal: Polyhedral Morphology

 
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Description: This photograph shows polyhedral morphology of a ZrNiSn single crystal grown by using the self-flux method (excess Sn), this half-Heusler compound, whose structure can be respresented as 4 interpenetrating cubic fcc sublattices, is part of a series of narrow-gap semiconductors with potential low and intermediate temperature thermoelectric applications.
Keywords: polyhedral • self-flux method • Heusler compound • fcc lattice • semiconductor • thermoelectric applications
Categories: Science approaches > Structure, bonding & defects > Crystallography
Applications > Electronics
Properties > Electrical, magnetic & optical
Properties > Electrical, magnetic & optical > Semiconductivity
Testing, analysis & experimentation
Created by: Paul Canfield, AMES Laboratory, US Department of Energy
License: This resource is released under the Creative Commons Public Domain Mark license ( ).
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Date created: 22 January 2011
Date added: 13 October 2011
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Resource ID: 3741