Image icon  ZrNiSn Single Crystal: Polyhedral Morphology

Use this resource: Use this resource icon
Link to this page:
View at:        
Resource type: Image
Description: This photograph shows polyhedral morphology of a ZrNiSn single crystal grown by using the self-flux method (excess Sn), this half-Heusler compound, whose structure can be respresented as 4 interpenetrating cubic fcc sublattices, is part of a series of narrow-gap semiconductors with potential low and intermediate temperature thermoelectric applications.
Keywords: polyhedral • self-flux method • Heusler compound • fcc lattice • semiconductor • thermoelectric applications
Categories: Science approaches > Structure, bonding & defects > Crystallography
Applications > Electronics
Properties > Electrical, magnetic & optical
Properties > Electrical, magnetic & optical > Semiconductivity
Testing, analysis & experimentation
Created by: Paul Canfield, AMES Laboratory, US Department of Energy
License: This resource is released under the Creative Commons Public Domain Mark license ( ).
Creative Commons Public Domain Mark logo
You are free to use this work for any purpose including:
  • unrestricted redistribution
  • commercial use
  • modification
View the full legal code here.
Date created: 22 January 2011
Date added: 13 October 2011
Resource ID: 3741